"Physically Based Modeling of Selective Deposition and Etch Processes", V. Mahadev, Z. Tang and T. S. Cale, in preparation.
"Integrated Modeling and Simulation of Dual Frequency Plasma Deposition Processes", F. R. Myers and T. S. Cale, in preparation.
"Control Aspects of Programmed Rate Chemical Vapor Depostion of Tungsten", J. Kristof, L. Song, K. S. Tsakalis and T. S. Cale, in preparation.
"Nonuniformity in CMP Processes Due to Stresses", D. Wang, S. M. Chandrashekar, S. P. Beaudoin and T. S. Cale, to be published in Proceedings of the Second International Conference on Chemical-Mechanical Polish Planarization for ULSI Multilevel Interconnection, VMIC, 1997, in press.
"Multi-Scale Simulations for Thermal Chemical Vapor Deposition Processes", M., K. Gobbert, T. Merchant, L. J. Borucki and T. S. Cale, J. Electrochem. Soc., submitted.
(Invited) "Feature Scale Transport and Reaction During Low Pressure Deposition Processes", T. S. Cale and V. Mahadev, in Thin Films, Vol. 22, S. Rossnagel and A. Ulman (eds.), Academic Press, 1996, p. 175.
(Invited) "Topography Evolution During Semiconductor Materials Processing", T. S. Cale, V. Mahadev, Z. Tang, G. Rajagopalan and L. J. Borucki, in Plasma Processing of Semiconductors, F. Williams (ed.), Kluwer Academic Publishers, 1997, in press.
(Invited) "Introduction to Plasma Enhanced Chemical Vapor Deposition", T. S. Cale, G. B. Raupp, B. R. Rogers, F. R. Myers and T. E. Zirkle, in Plasma Processing of Semiconductors", F. Williams (ed.), Kluwer Academic Publishers, 1997, in press.
"Optimal Control Chemical Vapor Deposition", L. Song, S. Shen, P. E. Crouch, K. S. Takalis, and T. S. Cale, J. Electrochem. Soc., revised version submitted, publication expected early 1997.
"Microloading in LPCVD: a Multi-Scale Simulation Approach", M. K. Gobbert, T. P. Merchant, T. S. Cale and L. J. Borucki, in Advanced Metalization and Interconnect Systems for ULSI Applications in 1996, R. Havemann and J. Schmitz, eds., MRS, 1997, in press.
"Simulations of Metal Thin Film Reflow Processes", H. Liao and T. S. Cale, J. Vac. Sci. Technol. B14(4), 2615 (1996).
"Remote Microwave Plasma Enhanced CVD of Low Dielectric Constant SiOxFy Films from FASi-4 and Oxygen", M. Virmani, Z. Jin, G. J. Leusink, G. B. Raupp and T. S. Cale, in Proceedings of the Second International Dielectrics for VLSI/ULSI Multilevel Interconnection Conference, VMIC, 1996, p. 261.
"Simulations of Simultaneous Deposition and Sputter Etching", M. Virmani, V. Mahadev and T. S. Cale, in Proceedings of the Second International Dielectrics for VLSI/ULSI Multilevel Interconnection Conference, VMIC, 1996, p. 139.
"Mesoscopic Modeling of Microloading During LPCVD", M. K. Gobbert, C. A. Ringhofer and T. S. Cale, J. Electrochem. Soc. 143(8), 2624 (1996).
"Run-to-Run Adaptive Optimization of a Tungsten Silicide LPCVD Process", T. S. Cale, P. E. Crouch, S. Shen and K. S. Tsakalis, in Proceedings of the 34th Conference on Decision and Control, IEEE, 1995, p. 2474.
"A Methodology for Rapidly Optimizing Step Coverage for LPCVD Tungsten", S. Bolnedi, D. Wang, G. B. Raupp and T. S. Cale, in Advanced Metalization and Interconnect Systems for ULSI Applications in 1995, R. C. Ellwanger and S.-Q. Wang, eds., MRS, 1996, p. 523.
"Feature Scale Simulation Studies of TEOS-sourced Remote Microwave PECVD of Silicon Dioxide: Role of Oxygen Atom Recombination", M. Virmani, D. A. Levedakis, G. B. Raupp and T. S. Cale, J. Vac. Sci. Technol. A 14(3), 977 (1996).
"Simulation and Experimental Study of Re-emission During Sputter Deposition of Ti-W Films", B. R. Rogers, Y.-K. Chang and T. S. Cale, J. Vac. Sci. Technol. A 14(3), 977 (1996).
(Invited) "Surface Evolution During Semiconductor Processing", G. Rajagopalan, V. Mahadev and T. S. Cale, VLSI Design, to be published in Jan. 1997.
"The Combination of Equipment Scale and Feature Scale Models for Chemical Vapor Deposition via a Homogenization Technique", M. Gobbert, T. S. Cale and C. Ringhofer, VLSI Design, to be published in Jan. 1997.
"Optimal Control Processing to Increase Single Wafer Reactor Throughput in LPCVD", P. E. Crouch, L. Song, K. S. Tsakalis and T. S. Cale, in Proceedings of the Fourth IEEE/UCS/SEMI International Symposium on Semiconductor Manufacturing, IEEE, 1995, p. 233.
(Invited) "Conformality and Composition of Films Deposited at Low Pressures", T. S. Cale, Chem. Eng. Comm. 152-153, 261 (1996).
"Programmed Rate Chemical Vapor Deposition of Blanket Tungsten Thin Films", K. M. Tracy, S. Bolnedi, T. S. Cale, in Proceedings of the 12-th International VLSI Multilevel Interconnection Conference, T. Wade, ed., VMIC, 1995, p.643.
"LPCVD of Aluminum Using TIBA in a Cold-Wall Single-Wafer Reactor", S. S. Doad, G. J. Leusink, T. S. Cale, J. T. Hillman and R. F. Foster, in Proceedings of the 12-th International VLSI Multilevel Interconnection Conference, T. Wade, ed., VMIC, 1995, p. 608.
"Increasing Throughput in Low Pressure Chemical Vapor Deposition: An Optimal Control Approach", T. S. Cale, P. E. Crouch, L. Song and K. S. Tsakalis, in Proceedings of the 1995 American Control Conference, American Control Council, IEEE, 1995, p. 1289.
"A Simple Adaptive Optimization Algorithm for the Tungsten LPCVD Process", T. S. Cale, P. E. Crouch, S. Shen and K. S. Tsakalis, in Proceedings of the 1995 American Control Conference, American Control Council, IEEE, 1995, p. 1294.
"Conformality of SiO2 Films from Tetraethoxysilane-sourced Remote Plasma-enhanced Chemical Vapor Deposition", G. B. Raupp, D. A. Levedakis and T. S. Cale, J. Vac. Sci. Technol. A 13(3), 676 (1995).
"Step Coverage Prediction in TEOS-Oxygen Plasma Systems", F. R. Myers and T. S. Cale, in Proceedings of the First International Dielectrics for VLSI/ULSI Multilevel Interconnection Conference, T. Wade, ed., 1995, p. 221.
"Experimental and Simulation Studies of Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Tetrakis-dimethylaminotitanium and Ammonia", H. Liao, J. J. Hsieh, A. J. Toprac, J. N. Musher, R. G. Gordon, B. H. Weiller and T. S. Cale, in Advanced Metallization for ULSI Applications 1994, R. Blumenthal and G. C. A. M. Janssen, eds., MRS, 1995, p. 231.
"Simulation of Collimated Flux Distributions during Physical Vapor Deposition ", Z. Lin and T. S. Cale, Thin Solid Films 270(1), 627 (1995).
(Invited) "Conformality and Composition of Films Deposited at Low Pressures", T. S. Cale, in Modeling and Simulation of Thin-Film Processing, D. J. Srolovitz, C. A. Volkert, M. J. Fluss and R. J. Kee, eds., MRS Symp. Proc., Vol. 389, MRS, 1995, p. 95.
"The Effects of Collimator Life Time on the Ti and TiN Film Growth Rates and Conformalities in Sputter Deposition Processes: Experiments and Simulations", H. Liao, H. Stippel, K. Reddy, S. Geha, K. Brown, P. Lindorfer, S. Saha, Z. Lin and T. Cale, in Modeling and Simulation of Thin-Film Processing, D. J. Srolovitz, C. A. Volkert, M. J. Fluss and R. J. Kee, eds., MRS Symp. Proc. Vol. 389, MRS, 1995, p. 263.
"Optimal Control for LPCVD", T. S. Cale, P. E. Crouch, L. Song and K. S. Tsakalis, in Proceedings of the Symposium on Process Control, Diagnostics and Modeling in Semiconductor Manufacturing, M. Meyyappan, D. J. Economou and S. W. Butler, eds., Electrochemical Society, PV 95-2, 1995, p. 97.
"One Approach to Combining Equipment Scale and Feature Scale Models", M. K. Gobbert, T. S. Cale and C. A. Ringhofer, in Proceedings of the Symposium on Process Control, Diagnostics and Modeling in Semiconductor Manufacturing, M. Meyyappan, D. J. Economou and S. W. Butler, eds., Electrochemical Society, PV 95-2, 1995, p. 553.
"Experimental and Simulation Studies of Thermal Flow of Borophosphosilicate and Phosphosilicate Glasses", H. Liao, G. Thallikar, F. R. Myers and T. S. Cale, in Proceedings of the First International Dielectrics for VLSI/ULSI Multilevel Interconnection Conference, T. Wade, ed., 1995, p. 204.
"Modeling of Collimated Titanium Nitride Physical Vapor Deposition using a Combined Specular-Diffuse Formulation", A. J. Toprac, B. P. Jones, J. Schlueter and T. S. Cale, MRS, in Evolution of Thin Film and Surface Structure and Morphology, B. G. Demczyk, E. Garfunkel, B. M. Clemens, E. D. Williams and J. J. Cuomo, eds. MRS Symp. Proc., Vol. 355, MRS, 1995, p. 575.
"Kinetic Model Testing and Extraction of Wafer Surface Conditions and Parameters from Film Profiles in LPCVD W from SiH4 and WF6", S. Bolnedi, M. Virmani, G. B. Raupp and T. S. Cale, in Advanced Metallization for ULSI Applications 1994, R. Blumenthal and G. C. A. M. Janssen, eds., MRS, 1995, p. 469.
"Experimental and Simulation Studies of PECVD Titanium", S. S. Doad, T. S. Cale, M. S. Ameen, J. T. Hillman and R. F. Foster, in Advanced Metallization for ULSI Applications 1994, R. Blumenthal and G. C. A. M. Janssen, eds., MRS, 1995, p. 327.
"Uncollimated and Collimated TiN PVD: Simulations and Experiments", Z. Lin, T. S. Cale, A. J. Toprac, S.-Q. Wang and J. Schlueter, in Advanced Metallization for ULSI Applications 1994, R. Blumenthal and G. C. A. M. Janssen, eds., MRS, 1995, p. 333.
"Experimental and Simulation Studies of Atmospheric Pressure Chemical Vapor Deposition of Titanium Nitride from Tetrakis-dimethylaminotitanium and Ammonia", H. Liao, J. J. Hsieh, A. J. Toprac, J. N. Musher, R. G. Gordon, B. H. Weiller and T. S. Cale, in Advanced Metallization for ULSI Applications 1994, R. Blumenthal and G. C. A. M. Janssen, eds., MRS, 1995, p. 231.
"Experimental and Simulation Studies of Thermal Flow of Borophosphosilicate and Phosphosilicate Glasses", G. Thallikar, H. Liao, T. S. Cale and F. R. Myers, J. Vac. Sci. Technol. B 13(4), 1875 (1995).
"Flux Distributions and Deposition Profiles from Hexagonal Collimators During Sputter Deposition", Z. Lin and T. S. Cale, J. Vac. Sci. Technol. A 13(4), 2183 (1995).
"Simulation of Collimated Titanium Nitride Physical Vapor Deposition using EVOLVE", A. J. Toprac, S.-Q. Wang, J. Schlueter, and T. S. Cale, in Advanced Metallization for Devices and Circuits - Science, Technology and Manufacturability, S. P. Murarka, A. Katz, K. N. Tu and K. Maex, eds, MRS Symp. Proc. Vol. 337, MRS, 1994, p. 547.
"Transport Through Multicomponent Dual Frequency Plasma Sheaths", F. R. Myers, M. W. Peters, M. Ramaswami and T. S. Cale, Thin Solid Films 253, 522 (1994).
"Numerical Simulations of Thin Film Thermal Reflow", H. Liao and T. S. Cale, Thin Solid Films 253, 419 (1994).
"Computer Simulations of Borophosphosilicate Film Thermal Flow", H. Liao and T. S. Cale, in Proceedings of the Eleventh International VLSI Multilevel Interconnect Conference, 1994, p. 527.
"Simulation of Collimated Titanium Nitride Physical Vapor
Deposition using EVOLVE", A. J. Toprac, S.-Q. Wang, J. Schlueter,
and T. S. Cale, to be published by MRS.
"Transport Through Multicomponent Dual Frequency
Plasma Sheaths", F. R. Myers, M. W. Peters, M. Ramaswami
and T. S. Cale, Thin Solid Films, accepted.
"Ion Energy and Angular Distributions in TEOS-Oxygen
Dual Frequency Plasma Sheaths, F. R. Myers, M. W. Peters, M. Ramaswami
and T. S. Cale, in Proceedings of the Eleventh International
VLSI Multilevel Interconnect Conference, 1994, p. 553.
"Flux Distributions and Growth Rate Uniformities
From Hexagonal Collimators", Z. Lin and T. S. Cale, Proceedings
of the Eleventh International VLSI Multilevel Interconnect Conference,
1994, p. 552.
"The Impact of Gas Phase and Surface Chemical
Reactions on Step Coverage in LPCVD", G. B. Raupp and T.
S. Cale, Invited paper, Materials Research Society, in press,
1994.
"Compositional Variation in Sputtered Ti-W Films
Due to Re-emission", B. R. Rogers, C. J. Tracy and T. S.
Cale, J. Vac. Sci. Tech., in press.
"Origin of the Apparent Reaction order Shifts
in Silane Reduction of WF6", S. Bolnedi, G. B. Raupp and
T. S. Cale, in Advanced Metallization for ULSI Applications
1993, Y. Shacham and D. Favreau, eds., MRS, 1994, p. 385.
"MOCVD TiN from TDEAT and Ammonia: Experiments
and Simulations", T. S. Cale, M. B. Chaara, H. Liao and G.
B. Raupp, in Advanced Metallization fo ULSI Applications 1993,
Y. Shacham and D. Favreau, eds., MRS, 1994, p. 159.
"Low Knudsen Number Transport and Deposition",
H. Liao and T. S. Cale, J. Vac. Sci. & Tech.
A12(4), 1020 (1994).
"Applications of EVOLVE for Deposition Simulations
on Patterned Wafers", T. E. Zirkle and T. S. Cale, in TECHCON'93
- Extended Abstracts, 1993, p. 566.
"Modeling and Experimental Studies of Silicon
Oxide Film Deposition Using Remote Microwave Plasmas", D.
A. Levedakis, M. B. Chaara, T. S. Cale and G. B. Raupp, in TECHCON'93
- Extended Abstracts, 1993, p. 517.
"Low Pressure Depositions on Three Dimensional
Surfaces", H. Liao and T. S. Cale, in TECHCON'93 - Extended
Abstracts, 1993, p. 515.
"Kinetic Parameter Estimates Using Film Profiles
in Features", M. B. Chaara, G. B. Raupp and T. S. Cale, in
TECHCON'93 - Extended Abstracts, 1993, p. 514.
"Dual Frequency Plasma Sheath Model", F.
R. Myers, M. Ramaswami and T. S. Cale, in TECHCON'93 - Extended
Abstracts, 1993, p. 513.
"Reactor Scale and Feature Scale Simulations
of Programmed Rate CVD", J.-H. Park and T. S. Cale, in "Proceedings
of the First International Conference on Rapid Thermal Processing",
1993, p. 393.
"Ion Distribution Functions in Dual Frequency
Plasma Sheaths", F. R. Myers, M. Ramaswami and T. S. Cale,
in Proceedings of the Tenth International VLSI Multilevel Interconnect
Conference, 1993, p.544.
"Low Pressure Deposition Simulations on Three
Dimensional Surfaces", H. Liao and T. S. Cale, in Proceedings
of the Tenth International VLSI Multilevel Interconnect Conference,
1993, p.532.
"Dual Frequency Plasma Sheath Model", F.
R. Myers, M. Ramaswami and T. S. Cale, J. Electrochem. Society,
141(5), 1313 (1994).
"Spatial Composition Variations in Sputter Deposited
Ti-W Films", B. R. Rogers and T. S. Cale, Thin Solid
Films, 236(1), 334 (1993).
"Conformality of MOCVD TiN Films from TDEAT
and NH3", T. S. Cale, M. B. Chaara, G. B. Raupp and I. J.
Raaijmakers, Thin Solid Films, 236(2), 294 (1993).
"Three Dimensional Simulation of an Isolation
Trench Refill Process", H. Liao and T. S. Cale, Thin
Solid Films, 236(1), 352 (1993).
"Characterization of PSG Films Deposited From
PECVD TEOS and TMP", C. L. Pillote, F. A. Shemansky, T. S.
Cale and G. B. Raupp, Thin Solid Films, 236, 287
(1993).
"Sequential Deposition of SiO2 and Poly-Si in
Isolation Trenches", T. E. Zirkle, S. R. Wilson, S. Sundaram,
T. S. Cale and G. B. Raupp, J. Vac. Sci. Tech., A11(4)
905 (1993).
"Predicting Intrawafer Film Thickness Uniformity
in an Ultralow Pressure Chemical Vapor Deposition Reactor",
G. B. Raupp, D. Levedakis and T. S. Cale, J. Vac. Sci. Tech.,
A11(6), 3053 (1993).
"Surface Diffusion of Aluminum-(1.5%)Copper
During Sputter Deposition", T. S. Cale, M. K. Jain, R. Duffin
and C. J. Tracy, J. Vac. Sci. Tech., B11(2),
311 (1993).
"Kinetics and Conformality of TiN Films from
TDMAT and NH3", T. S. Cale, G. B. Raupp, J. T. Hillman and
M. J. Rice, in Advanced Metallization for ULSI Applications
1992, T. S. Cale and F. Pintchovski, eds., MRS, 1993, p. 195.
"Corrosion Film Model for the Hydrogen Reduction
of WF6: Implications for Feature Scale Simulation", G. B.
Raupp and T. S. Cale, in Advanced Metallization for ULSI Applications
1992, T. S. Cale and F. Pintchovski, eds., MRS, 1993, p. 187.
"Conformality of Collimated Sputter Deposited
Films", D. S. Taylor, M. K. Jain, T. S. Cale, M. G. Fissel
and I. J. Raaijmakers, in Advanced Metallization for ULSI Applications
1992, T. S. Cale and F. Pintchovski, eds., MRS, 1993, p.353.
"Reaction Mechanism Discrimination Using Experimental
Film Profiles in Features", T. S. Cale, G. B. Raupp, M. B.
Chaara and F. A. Shemansky, in Metallurgical Coatings and Thin
Films in 1992, Vol. II, B. D Sartwell, G. E. McGuire, S. Hoffman,
eds., Elsevier, 1992, p. 66.
"PETEOS Simulation Using EVOLVE, A Deposition
Simulator", T. E. Zirkle, C. Drowley, W. G. Cowden and T.
S. Cale, in Metallurgical Coatings and Thin Films in 1992,
Vol. II, B. D. Sartwell, G. E. McGuire, S. Hoffman, eds.,
Elsevier, 1992, p 45.
"A Method to Estimate Local Deposition Conditions
Using Film Profiles in Features", M. B. Chaara and T. S.
Cale, in Metallurgical Coatings and Thin Films in 1992, Vol.
II, B. D. Sartwell, G. E. McGuire, S. Hoffman, eds., Elsevier,
1992, p. 19.
"Sequential Deposition of SiO2 and Poly-Si for
Trench Isolation", T. S. Cale, G. B. Raupp, T. E. Zirkle,
S. R. Wilson and S. Sundaram, in "Extended Abstracts, Vol.
92-2", The Electrochemical Society, 1992, p.385.
"Estimating Deposition Conditions and Kinetic
Parameters Using Film Profiles", T. S. Cale, M. B. Chaara,
and A. Hasper, in Advanced Metallization and Processing for
Semiconductor Devices and Circuits - II, A. Katz, S. P. Murarka,
Y. I. Nissim, and J. M. E. Harper, eds., MRS Symp. Ser. Vol. 260,
p.393, 1992.
"Kinetics and Mechanism of Silicon Dioxide Deposition
Through Thermal Pyrolysis of Tetraethoxysilane", G. B. Raupp,
F. A. Shemansky and T. S. Cale, J. Vac. Sci. Tech., B,
10(6), 2422(1992).
"Free Molecular Transport and Deposition for
Blanket and Selective Tungsten in Features of Circular Cross Section",
M. Govil, T. S. Cale and G. B. Raupp, in Patterning Science
and Technology II and Interconnection and Contact Metallization
for ULSI, ECS Proceedings Vol. 92-6, p. 322, 1992.
"PECVD of Silicon Dioxide From TEOS/Oxygen Mixtures",
T. S. Cale and G. B. Raupp, invited chapter in Plasma Properties,
Deposition and Etching, J. J. Pouch and S. A. Alterovitz,
eds., Trans. Tech. Publications, Ltd., Aedermannsdorf, Switzerland,
1993, p.1.
"Curvature Driven Surface Diffusion of Aluminum-(1.5%)Copper
During Sputter Deposition", T. S. Cale, M. K. Jain, R. L.
Duffin and C. J. Tracy, in Proceedings of the Ninth International
IEEE VLSI Multilevel Interconnection Conference, IEEE, p.
471, 1992.
"PETEOS: Experiment and Simulation", T.
E. Zirkle, C. I. Drowley, W. G. Cowden, T. S. Cale and G. B. Raupp,
in "Proceedings of the Ninth International IEEE VLSI Multilevel
Interconnection Conference, IEEE, p.447, 1992.
"A Dual Frequency Plasma Sheath Model",
F. R. Myers and T. S. Cale, J. Electrochem. Soc.,
139(12), 3587(1992).
"Reaction Mechanism Discrimination Using Experimental
Film Profiles in Features", T. S. Cale, G. B. Raupp, M. B.
Chaara and F. A. Shemansky, Thin Solid Films, 220,
66(1992).
"PETEOS Simulation Using EVOLVE, A Deposition
Simulator", T. E. Zirkle, C. Drowley, W. G. Cowden and T.
S. Cale, Thin Solid Films, 220, 45(1992).
"A Method to Estimate Local Deposition Conditions
Using Film Profiles in Features", Mabrouk B. Chaara and Timothy
S. Cale, Thin Solid Films, 220, 19(1992).
"Comparison of LPCVD Film Conformalities Predicted
by Ballistic Transport-Reaction and Continuum Diffusion-Reaction
Models, M. K. Jain, T. S. Cale and T. H. Gandy, J. Electrochem.
Soc., 140(1), 242(1993).
"The Inherently Transient Nature of Deposition
Processes", T. S. Cale, G. B. Raupp, J.-H. Park, M. K. Jain
and B. R. Rogers, in First International Conference on Transport
Phenomena in Processing, S. Guceri, ed., Technomic Publishing
Company, 1993, p. 127.
"Step Coverage Predictions Using Combined Reactor
Scale and Feature Scale Models for Blanket Tungsten LPCVD",
T. S. Cale, J.-H. Park, T. H. Gandy, G. B. Raupp and M. K. Jain,
Chem. Eng. Comm., 119, 197 (1993).
"Model Predictions of Feature Size Dependent
Step Coverages by PVD Aluminum: Surface Diffusion", T. S.
Cale, T. H. Gandy, G. B. Raupp and M. Ramaswami, in Metallurgical
Coatings and Thin Films 1991, Vol II, G. E. McGuire, D. C.
McIntyre and S. Hofmann, eds., Elsevier, Amsterdam, 1991, p. 54.
"A Fundamental Model for Free Molecular Transport
and Deposition for a Selective CVD Tungsten Plug Process",
M. Govil, T. S. Cale and G. B. Raupp, in "Extended Abstracts,
Vol. 91-2, Electrochemical Society, Extended Abstract 224, p.
328, 1991.
"Ballistic Transport - Reaction Model Prediction
of Film Conformality in TEOS/O2 Plasma Enhanced Deposition of
Silicon Dioxide", T. S. Cale, G. B. Raupp and T. H. Gandy,
J. Vac . Sci. Tech., A10(4), 1128(1992).
"The Role of Oxygen Atoms in Plasma Enhanced
Deposition of Silicon Dioxide from TEOS", G. B. Raupp, T.
S. Cale and H. P. W. Hey, J. Vac. Sci. Tech., B10(1),
37(1992).
"Comparison of Calculated and Experimental Conformality
for Blanket Tungsten LPCVD", T. S. Cale, T. H. Gandy, M.
K. Jain, G. B. Raupp, M. Govil and A. Hasper, in Advanced Metallization
for ULSI Applications, V. V. S. Rana, R. V. Joshi and I. Ohdomari,
eds., MRS, 1992, p. 101.
"The Inherently Transient Nature of Deposition
Processes", T. S. Cale, J. H. Park, G. B. Raupp, M. K. Jain
and B. R. Rogers, in Advanced Metallization for ULSI Applications,
V. V. S. Rana, R. V. Joshi and I. Ohdomari, eds., MRS, 1992, p.
93.
"A General Model for Aluminum PVD", T.
S. Cale, T. H. Gandy, M. K. Jain, M. Ramaswami and G. B. Raupp,
in Proceedings of the Eighth International IEEE VLSI Multilevel
Interconnection Conference, IEEE, 1991, p. 350.
"Impacts of Temperature and Reactant Flow Rate
Transients on LPCVD Tungsten Silicide Film Properties", T.
S. Cale, G. B. Raupp and J.-H. Park, in Rapid Thermal and Integrated
Processing, MRS Symp. Proc. ,Vol. 224, MRS, 1991, p. 171.
"Model Predictions of Feature Size Dependent
Step Coverages by PVD Aluminum: Surface Diffusion", T. S.
Cale, T. H. Gandy, G. B. Raupp and M. Ramaswami, Thin Solid
Films, 206(1/2), 54(1991).
"Flux Distributions in Low Pressure Deposition
and Etch Models", T. S. Cale, J. Vac., Sci. Tech.,
B9(5), 2551(1991).
"Step Coverage of Tungsten Silicide Films Deposited
by Low Pressure Dichlorosilane Reduction of Tungsten Hexafluoride",
G. B. Raupp, T. S. Cale, M. K. Jain, D. Srivinas and B. Rogers,
in Metallurgical Coatings and Thin Films 1990, Vol. I,
1990, p. 495.
"Maximizing Step Coverage in Tungsten LPCVD",
T. S. Cale, G. B. Raupp and M. K. Jain, in Metallurgical Coatings
and Thin Films 1990, Vol. II, 1990, p. 51.
"Mechanism of Plasma-Enhanced Deposition of
Silicon Dioxide from TEOS/O2 Mixtures", G. B. Raupp, T. S.
Cale and Peter W. Hey, in Chemical Perspectives of Microelectronic
Materials II, MRS Symp. Proc. ,Vol. 204, MRS, p. 495, 1991.
"Unified Model for Ballistic Transport and Gas-Solid
Reactions in Features", T. S. Cale, G. B. Raupp and T. H.
Gandy, in Chemical Perspectives of Microelectronic Materials
II, MRS Symp. Proc. ,Vol. 204, MRS, p. 375, 1991.
"Fundamental Model of Transport and Reaction
in a Cylindrical Catalyst Pore", T. S. Cale and S. A. Mohammed,
Chem. Eng. Comm., 109, 89(1991).
"A Fundamental Model for Transport and Deposition
of Blanket Tungsten Films", T. S. Cale, T. H. Gandy and G.
B. Raupp, in Tungsten and Other Advanced Metals for ULSI Applications
in 1990, eds., G. C. Smith and R. Blumenthal, MRS, 1991, p.
231.
"Comparison of Continuum Diffusion-Reaction
and Fundamental Particle Flux Based Models for LPCVD", T.
S. Cale, G. B. Raupp, T. H. Gandy and M. K. Jain, in Tungsten
and Other Advanced Metals for ULSI Applications in 1990, eds.,
G. C. Smith and R. Blumenthal, MRS, 1991, p. 165.
"A Fundamental Feature Scale Model for Low Pressure
Deposition Processes", T. S. Cale, T. H. Gandy and G. B.
Raupp, J. Vac . Sci. Tech., A9(3), 524(1991).
"Unifying Model for Step Coverage in Deposition
Processes for Multilevel Interconnection", G. B. Raupp, T.
S. Cale, in Proceedings of the IEEE VLSI Multilevel Interconnection
Conference, 1990, p. 214.
"Deposition of Tungsten Silicide Barriers and
Tungsten in Rectangular Vias", T. S. Cale, G. B. Raupp and
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